Espesifikasyon pou BY268TR

Nimewo pati : BY268TR
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1.4KV 800MA SOD57
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1400V
Kouran - Mwayèn Rèktifye (Io) : 800mA
Voltage - Forward (Vf) (Max) @ Si : 1.25V @ 400mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 400ns
Kouran - Fèy Reverse @ Vr : 2µA @ 1400V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : SOD-57, Axial
Pake Aparèy Founisè : SOD-57
Operating Tanperati - Junction : -55°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 1.4KV 800MA SOD57
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2303480 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BY268TR nan stock pou vann.
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pwodwi ki gen rapò pou BY268TR Vishay Semiconductor Diodes Division

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