BSZ120P03NS3GATMA1 PDF Mode Download - MOSFET P-CH 30V 40A TSDSON-8

Espesifikasyon pou BSZ120P03NS3GATMA1

Nimewo pati : BSZ120P03NS3GATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 30V 40A TSDSON-8

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Ta), 40A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 12 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 3.1V @ 73µA

Chaje Gate (Qg) (Max) @ Vgs : 45nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 3360pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.1W (Ta), 52W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TSDSON-8

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSZ120P03NS3GATMA1

Entèn Nimewo Pati

AX-BSZ120P03NS3GATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 30V 40A TSDSON-8

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1736830 moso

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pwodwi ki gen rapò pou BSZ120P03NS3GATMA1 Infineon Technologies

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BSZ120P03NS3GATMA1 Mode

Espesifikasyon pou BSZ120P03NS3GATMA1

pwodwi ki gen rapò pou BSZ120P03NS3GATMA1 Infineon Technologies