BSS670S2LL6327HTSA1 PDF Mode Download - MOSFET N-CH 55V 540MA SOT-23

Espesifikasyon pou BSS670S2LL6327HTSA1

Nimewo pati : BSS670S2LL6327HTSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 55V 540MA SOT-23

Seri : OptiMOS™

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 55V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 540mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 650 mOhm @ 270mA, 10V

Vgs (th) (Max) @ Id : 2V @ 2.7µA

Chaje Gate (Qg) (Max) @ Vgs : 2.26nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 75pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 360mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-23-3

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSS670S2LL6327HTSA1

Entèn Nimewo Pati

AX-BSS670S2LL6327HTSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 55V 540MA SOT-23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

47766 moso

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BSS670S2LL6327HTSA1 Mode

Espesifikasyon pou BSS670S2LL6327HTSA1

pwodwi ki gen rapò pou BSS670S2LL6327HTSA1 Infineon Technologies