BSS192PE6327T PDF Mode Download - MOSFET P-CH 250V 0.19A SOT-89

Espesifikasyon pou BSS192PE6327T

Nimewo pati : BSS192PE6327T

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 250V 0.19A SOT-89

Seri : SIPMOS®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 250V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 190mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.8V, 10V

RD sou (Max) @ Id, Vgs : 12 Ohm @ 190mA, 10V

Vgs (th) (Max) @ Id : 2V @ 130µA

Chaje Gate (Qg) (Max) @ Vgs : 6.1nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 104pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT89

Pake / Ka : TO-243AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSS192PE6327T

Entèn Nimewo Pati

AX-BSS192PE6327T

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 250V 0.19A SOT-89

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

65410 moso

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BSS192PE6327T Mode

Espesifikasyon pou BSS192PE6327T

pwodwi ki gen rapò pou BSS192PE6327T Infineon Technologies