Espesifikasyon pou BSS131E6327

Nimewo pati : BSS131E6327
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 240V .11A SOT-23
Seri : SIPMOS®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 240V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 110mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 14 Ohm @ 100mA, 10V
Vgs (th) (Max) @ Id : 1.8V @ 56µA
Chaje Gate (Qg) (Max) @ Vgs : 3.1nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 77pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 360mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SOT-23-3
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 240V .11A SOT-23
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
50472 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSS131E6327 nan stock pou vann.
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