BSR316PH6327XTSA1 PDF Mode Download - MOSFET P-CH 100V 360MA SC-59-3

Espesifikasyon pou BSR316PH6327XTSA1

Nimewo pati : BSR316PH6327XTSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 100V 360MA SC-59-3

Seri : SIPMOS®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 360mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.8 Ohm @ 360mA, 10V

Vgs (th) (Max) @ Id : 1V @ 170µA

Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 165pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 500mW (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SC-59

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSR316PH6327XTSA1

Entèn Nimewo Pati

AX-BSR316PH6327XTSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 100V 360MA SC-59-3

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BSR316PH6327XTSA1 Mode

Espesifikasyon pou BSR316PH6327XTSA1

pwodwi ki gen rapò pou BSR316PH6327XTSA1 Infineon Technologies