BSP316PH6327XTSA1 PDF Mode Download - MOSFET P-CH 100V 0.68A SOT223

Espesifikasyon pou BSP316PH6327XTSA1

Nimewo pati : BSP316PH6327XTSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 100V 0.68A SOT223

Seri : SIPMOS®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 680mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.8 Ohm @ 680mA, 10V

Vgs (th) (Max) @ Id : 2V @ 170µA

Chaje Gate (Qg) (Max) @ Vgs : 6.4nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 146pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.8W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-SOT223-4

Pake / Ka : TO-261-4, TO-261AA

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSP316PH6327XTSA1

Entèn Nimewo Pati

AX-BSP316PH6327XTSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 100V 0.68A SOT223

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BSP316PH6327XTSA1 Mode

Espesifikasyon pou BSP316PH6327XTSA1

pwodwi ki gen rapò pou BSP316PH6327XTSA1 Infineon Technologies