BSO615N Mode
Espesifikasyon pou BSO615N
Nimewo pati : BSO615N
Fabricant : Infineon Technologies
Deskripsyon : MOSFET 2N-CH 60V 2.6A 8SOIC
Seri : SIPMOS®
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.6A
RD sou (Max) @ Id, Vgs : 150 mOhm @ 2.6A, 4.5V
Vgs (th) (Max) @ Id : 2V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 380pF @ 25V
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : PG-DSO-8
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-BSO615N
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 60V 2.6A 8SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
26201 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen BSO615N nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou BSO615N Infineon Technologies
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