Espesifikasyon pou BSO612CV

Nimewo pati : BSO612CV
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N/P-CH 60V 3A/2A 8SOIC
Seri : SIPMOS®
Estati Pati : Obsolete
FET Kalite : N and P-Channel
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A, 2A
RD sou (Max) @ Id, Vgs : 120 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id : 4V @ 20µA
Chaje Gate (Qg) (Max) @ Vgs : 15.5nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 340pF @ 25V
Pouvwa - Max : 2W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : P-DSO-8
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N/P-CH 60V 3A/2A 8SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
26201 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSO612CV nan stock pou vann.
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pwodwi ki gen rapò pou BSO612CV Infineon Technologies

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