BSO080P03NS3GXUMA1 PDF Mode Download - MOSFET P-CH 30V 12A 8DSO

Espesifikasyon pou BSO080P03NS3GXUMA1

Nimewo pati : BSO080P03NS3GXUMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 30V 12A 8DSO

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 8 mOhm @ 14.8A, 10V

Vgs (th) (Max) @ Id : 3.1V @ 150µA

Chaje Gate (Qg) (Max) @ Vgs : 81nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 6750pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.6W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-DSO-8

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

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BSO080P03NS3GXUMA1

Entèn Nimewo Pati

AX-BSO080P03NS3GXUMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 30V 12A 8DSO

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Plon gratis / RoHS Konfòm

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Espesifikasyon pou BSO080P03NS3GXUMA1

pwodwi ki gen rapò pou BSO080P03NS3GXUMA1 Infineon Technologies