BSC097N06NSATMA1 PDF Mode Download - MOSFET N-CH 60V 46A TDSON-8

Espesifikasyon pou BSC097N06NSATMA1

Nimewo pati : BSC097N06NSATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 60V 46A TDSON-8

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 46A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 9.7 mOhm @ 40A, 10V

Vgs (th) (Max) @ Id : 3.3V @ 14µA

Chaje Gate (Qg) (Max) @ Vgs : 15nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1075pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 36W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TDSON-8

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSC097N06NSATMA1

Entèn Nimewo Pati

AX-BSC097N06NSATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 60V 46A TDSON-8

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Espesifikasyon pou BSC097N06NSATMA1

pwodwi ki gen rapò pou BSC097N06NSATMA1 Infineon Technologies