BSC019N04NSGATMA1 PDF Mode Download - MOSFET N-CH 40V 100A TDSON-8

Espesifikasyon pou BSC019N04NSGATMA1

Nimewo pati : BSC019N04NSGATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 40V 100A TDSON-8

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Ta), 100A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.9 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 4V @ 85µA

Chaje Gate (Qg) (Max) @ Vgs : 108nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 8800pF @ 20V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TDSON-8

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSC019N04NSGATMA1

Entèn Nimewo Pati

AX-BSC019N04NSGATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 40V 100A TDSON-8

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

665445 moso

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pwodwi ki gen rapò pou BSC019N04NSGATMA1 Infineon Technologies

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EPM7512AEQC208-7N	Intel	IC CPLD 512MC 7.5NS 208QFP
XC2C512-10PQ208I	Xilinx Inc.	IC CPLD 512MC 9.2NS 208QFP

BSC019N04NSGATMA1 Mode

Espesifikasyon pou BSC019N04NSGATMA1

pwodwi ki gen rapò pou BSC019N04NSGATMA1 Infineon Technologies