BSC011N03LSATMA1 PDF Mode Download - MOSFET N-CH 30V 100A 8TDSON

Espesifikasyon pou BSC011N03LSATMA1

Nimewo pati : BSC011N03LSATMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 100A 8TDSON

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 37A (Ta), 100A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.1 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 72nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4700pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 96W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PG-TDSON-8

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

BSC011N03LSATMA1

Entèn Nimewo Pati

AX-BSC011N03LSATMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 100A 8TDSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

595540 moso

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pwodwi ki gen rapò pou BSC011N03LSATMA1 Infineon Technologies