BSB104N08NP3GXUSA1 Mode
Espesifikasyon pou BSB104N08NP3GXUSA1
Nimewo pati : BSB104N08NP3GXUSA1
Fabricant : Infineon Technologies
Deskripsyon : MOSFET N-CH 80V 13A 2WDSON
Seri : OptiMOS™
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Ta), 50A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 10.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 40µA
Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2100pF @ 40V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.8W (Ta), 42W (Tc)
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : MG-WDSON-2, CanPAK M™
Pake / Ka : 3-WDSON
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 80V 13A 2WDSON
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
710105 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen BSB104N08NP3GXUSA1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
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pwodwi ki gen rapò pou BSB104N08NP3GXUSA1 Infineon Technologies
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