BSB028N06NN3GXUMA1 PDF Mode Download - MOSFET N-CH 60V 22A WDSON-2

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Nimewo pati : BSB028N06NN3GXUMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 60V 22A WDSON-2

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 22A (Ta), 90A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 2.8 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 4V @ 102µA

Chaje Gate (Qg) (Max) @ Vgs : 143nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 12000pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.2W (Ta), 78W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : MG-WDSON-2, CanPAK M™

Pake / Ka : 3-WDSON

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

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BSB028N06NN3GXUMA1

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AX-BSB028N06NN3GXUMA1

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Infineon Technologies

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MOSFET N-CH 60V 22A WDSON-2

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pwodwi ki gen rapò pou BSB028N06NN3GXUMA1 Infineon Technologies