AUIRL7736M2TR PDF Mode Download - MOSFET N-CH 40V 112A DIRECTFET

Espesifikasyon pou AUIRL7736M2TR

Nimewo pati : AUIRL7736M2TR

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 40V 112A DIRECTFET

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 179A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3 mOhm @ 67A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 150µA

Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 4.5V

Vgs (Max) : ±16V

Antre kapasite (Ciss) (Max) @ Vds : 5055pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 63W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DIRECTFET™ M4

Pake / Ka : DirectFET™ Isometric M4

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

AUIRL7736M2TR

Entèn Nimewo Pati

AX-AUIRL7736M2TR

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 40V 112A DIRECTFET

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

376715 moso

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pwodwi ki gen rapò pou AUIRL7736M2TR Infineon Technologies