APTMC120HR11CT3AG PDF Mode Download - POWER MODULE - SIC MOSFET

Espesifikasyon pou APTMC120HR11CT3AG

Nimewo pati : APTMC120HR11CT3AG

Fabricant : Microsemi Corporation

Deskripsyon : POWER MODULE - SIC MOSFET

Seri : -

Estati Pati : Active

FET Kalite : 2 N-Channel (Dual)

Karakteristik FET : Silicon Carbide (SiC)

Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 26A (Tc)

RD sou (Max) @ Id, Vgs : 98 mOhm @ 20A, 20V

Vgs (th) (Max) @ Id : 3V @ 5mA

Chaje Gate (Qg) (Max) @ Vgs : 62nC @ 20V

Antre kapasite (Ciss) (Max) @ Vds : 950pF @ 1000V

Pouvwa - Max : 125W

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake / Ka : Module

Pake Aparèy Founisè : SP3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

APTMC120HR11CT3AG

Entèn Nimewo Pati

AX-APTMC120HR11CT3AG

Fabricant

Microsemi Corporation

Kout Deskripsyon

POWER MODULE - SIC MOSFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

28980 moso

referans pri

~~USD 0~~

pri nou

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AXE Semiconductor gen APTMC120HR11CT3AG nan stock pou vann.

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pwodwi ki gen rapò pou APTMC120HR11CT3AG Microsemi Corporation

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APTMC120HR11CT3AG Mode

Espesifikasyon pou APTMC120HR11CT3AG

pwodwi ki gen rapò pou APTMC120HR11CT3AG Microsemi Corporation