APTMC120AM08CD3AG Mode
Espesifikasyon pou APTMC120AM08CD3AG
Nimewo pati : APTMC120AM08CD3AG
Fabricant : Microsemi Corporation
Deskripsyon : MOSFET 2N-CH 1200V 250A D3
Seri : -
Estati Pati : Active
FET Kalite : 2 N-Channel (Half Bridge)
Karakteristik FET : Silicon Carbide (SiC)
Drenaj nan Voltage Sous (Vdss) : 1200V (1.2kV)
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250A (Tc)
RD sou (Max) @ Id, Vgs : 10 mOhm @ 200A, 20V
Vgs (th) (Max) @ Id : 2.2V @ 10mA (Typ)
Chaje Gate (Qg) (Max) @ Vgs : 490nC @ 20V
Antre kapasite (Ciss) (Max) @ Vds : 9500pF @ 1000V
Pouvwa - Max : 1100W
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : D-3 Module
Pake Aparèy Founisè : D3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 1200V 250A D3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
8996 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen APTMC120AM08CD3AG nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou APTMC120AM08CD3AG Microsemi Corporation
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