APTM100UM45DAG PDF Mode Download - MOSFET N-CH 1000V 215A SP6

Espesifikasyon pou APTM100UM45DAG

Nimewo pati : APTM100UM45DAG

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 1000V 215A SP6

Seri : POWER MOS 7®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 215A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 52 mOhm @ 107.5A, 10V

Vgs (th) (Max) @ Id : 5V @ 30mA

Chaje Gate (Qg) (Max) @ Vgs : 1602nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 42700pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 5000W (Tc)

Operating Tanperati : -40°C ~ 150°C (TJ)

Mounting Kalite : Chassis Mount

Pake Aparèy Founisè : SP6

Pake / Ka : SP6

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

APTM100UM45DAG

Entèn Nimewo Pati

AX-APTM100UM45DAG

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 1000V 215A SP6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

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pwodwi ki gen rapò pou APTM100UM45DAG Microsemi Corporation

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APTM100UM45DAG Mode

Espesifikasyon pou APTM100UM45DAG

pwodwi ki gen rapò pou APTM100UM45DAG Microsemi Corporation