Espesifikasyon pou APT8018JN

Nimewo pati : APT8018JN
Fabricant : Microsemi Corporation
Deskripsyon : MOSFET N-CH 800V 40A ISOTOP
Seri : POWER MOS IV®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 800V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 180 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 4V @ 5mA
Chaje Gate (Qg) (Max) @ Vgs : 700nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 14000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 690W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake Aparèy Founisè : ISOTOP®
Pake / Ka : SOT-227-4, miniBLOC
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET N-CH 800V 40A ISOTOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
67510 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen APT8018JN nan stock pou vann.
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EMS: 5-8 days.
Normal Post: 10-15 days.
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pwodwi ki gen rapò pou APT8018JN Microsemi Corporation

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