ALD212914PAL Mode
Espesifikasyon pou ALD212914PAL
Nimewo pati : ALD212914PAL
Fabricant : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 2N-CH 10.6V 0.08A 8DIP
Seri : EPAD®, Zero Threshold™
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Matched Pair
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 80mA
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : 20mV @ 10µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 500mW
Operating Tanperati : -
Mounting Kalite : Through Hole
Pake / Ka : 8-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 8-PDIP
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-ALD212914PAL
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 10.6V 0.08A 8DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
87315 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen ALD212914PAL nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou ALD212914PAL Advanced Linear Devices Inc.
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