Espesifikasyon pou ALD110808PCL

Nimewo pati : ALD110808PCL
Fabricant : Advanced Linear Devices Inc.
Deskripsyon : MOSFET 4N-CH 10.6V 16DIP
Seri : EPAD®
Estati Pati : Active
FET Kalite : 4 N-Channel, Matched Pair
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 10.6V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12mA, 3mA
RD sou (Max) @ Id, Vgs : 500 Ohm @ 4.8V
Vgs (th) (Max) @ Id : 820mV @ 1µA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : 2.5pF @ 5V
Pouvwa - Max : 500mW
Operating Tanperati : 0°C ~ 70°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 16-DIP (0.300", 7.62mm)
Pake Aparèy Founisè : 16-PDIP
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET 4N-CH 10.6V 16DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
111730 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ALD110808PCL nan stock pou vann.
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pwodwi ki gen rapò pou ALD110808PCL Advanced Linear Devices Inc.

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