Espesifikasyon pou 2SK4066-1E

Nimewo pati : 2SK4066-1E
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 60V 100A
Seri : -
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 4.7 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 220nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 12500pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.65W (Ta), 90W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-262-3
Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 60V 100A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
20368 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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pwodwi ki gen rapò pou 2SK4066-1E ON Semiconductor

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