1N5821HB0G Mode
Espesifikasyon pou 1N5821HB0G
Nimewo pati : 1N5821HB0G
Fabricant : Taiwan Semiconductor Corporation
Deskripsyon : DIODE SCHOTTKY 30V 3A DO201AD
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 30V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 500mV @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 500µA @ 30V
Kapasite @ Vr, F : 200pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : DO-201AD, Axial
Pake Aparèy Founisè : DO-201AD
Operating Tanperati - Junction : -55°C ~ 125°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-1N5821HB0G
Fabricant
Kout Deskripsyon
DIODE SCHOTTKY 30V 3A DO201AD
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
3680490 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen 1N5821HB0G nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou 1N5821HB0G Taiwan Semiconductor Corporation
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